System and method for lowering contact resistance of the radio frequency (RF) shield to ground

A semiconductor device comprising:

• a substrate having a plurality of metal traces;
• at least one die electrically attached to a first surface of the substrate;
• a plurality of vias formed around a perimeter of the first surface of the substrate, the plurality of vias formed through the substrate, an interior of the plurality of vias being exposed along a side surface of the semiconductor device;
• a mold compound for encapsulating the semiconductor device;
• a metal plating formed on the interior of the plurality of vias, wherein the metal plating also extends onto one or more of the metal traces and an insulating layer adjacent to the plurality of vias;
• a conductive coating conformally covering the mold compound and exposed metal traces.

A method of making a semiconductor device comprising:

• providing a substrate having a plurality of metal traces, a first plurality of segmented metal traces formed around a perimeter of the first surface of the substrate, wherein a side surface of the first plurality of segmented metal traces is exposed;
• attaching a die electrically to a first surface of the substrate;
• applying a first metal plating on a top surface end section of the first plurality of segmented metal traces, wherein the top surface is approximately perpendicular to the side surface;
• encapsulating the semiconductor device with a mold compound;
• applying a conductive coating to the mold compound, the exposed side surface of the first plurality of segmented metal traces and to the first metal plating, wherein the first metal plating is spread to extend above and below the top surface end section along the exposed side surface of the first plurality of segmented metal traces.