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US 8,508,021 B2Granted
Phase-change memory device and method of fabricating the same
AssigneeHynix Semiconductor Inc.
InventorsKeun Lee, Jin Hyock Kim, Young Seok Kwon
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Abstract
A phase-change memory device with improved deposition characteristic and a method of fabricating the same are provided. The phase-change memory device includes a semiconductor substrate having a phase-change area, a first material-rich first phase-change layer forming an inner surface of the phase-change area and comprised of a hetero compound of the first material and a second material, and a second phase-change layer formed on a surface of the first phase-change layer to fill the phase-change area.
Claims8
A phase-change memory device, comprising:
- a semiconductor substrate having a phase-change area of a hole type;
- a first material-rich first phase-change layer formed only on sidewalls and bottom of the phase-change area and including a hetero compound of the first material and a second material;
- and
- a second phase-change layer formed on a surface of the first phase-change layer to fill the phase-change area.
1 more element
Dependencies are inferred from the claim text.