Method for manufacturing semiconductor device
AssigneeElpida Memory, Inc.
InventorsToshiyuki Hirota, Takakazu Kiyomura
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Abstract
A method for manufacturing a semiconductor device includes at least forming a lower electrode comprising titanium nitride on a semiconductor substrate, forming a dielectric film comprising zirconium oxide as a primary constituent on the lower electrode, forming a first protective film comprising a titanium compound on the dielectric film, and forming an upper electrode comprising titanium nitride on the first protective film. The method can include a step of forming a second protective film on the lower electrode before the step of forming the dielectric film on the lower electrode.
Claims15
A semiconductor device comprising a capacitor, the capacitor comprising:
- a lower electrode comprising titanium nitride connected to a semiconductor substrate,
- a dielectric film comprising a layer of zirconium oxide as a primary constituent, the dielectric film being formed on said lower electrode,
- an upper electrode comprising a titanium nitride film, the upper electrode being formed on said dielectric film, and
- a protective film comprising titanium oxide as a primary constituent and being inserted in at least one of the interface between said upper electrode and said dielectric film and the interface between said lower electrode and said dielectric film.
Dependencies are inferred from the claim text.