Schottky-like contact and method of fabrication
AssigneeCanterprise Limited
InventorsMartin Ward Allen, Steven Michael Durbin
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Abstract
The present invention provides Schottky-like and ohmic contacts comprising metal oxides on zinc oxide substrates and a method of forming such contacts. The metal oxide Schottky-like and ohmic contacts may be formed on zinc oxide substrates using various deposition and lift-off photolithographic techniques. The barrier heights of the metal oxide Schottky-like contacts are significantly higher than those for plain metals and their ideality factors are very close to the image force controlled limit. The contacts may have application in diodes, power electronics, FET transistors and related structures, and in various optoelectronic devices, such as UV photodetectors.
Claims40
A Schottky-like contact comprising a substrate that comprises zinc oxide material and a conducting layer joined to the substrate to define a rectifying barrier at the junction of the substrate and the conducting layer, wherein the conducting layer comprises a conducting metal oxide, and wherein the conducting metal oxide has a metal atomic fraction that is higher than the stoichiometric fraction.
A method of forming a Schottky-like contact comprising the steps:
- (a) providing a substrate that comprises zinc oxide material;
- and
- (b) fabricating a layer comprising a conducting metal oxide on the substrate to form a rectifying barrier junction between the metal oxide layer and the zinc oxide material, wherein the conducting metal oxide has a metal atomic fraction that is higher than the stoichiometric fraction.
A Schottky-like contact comprising a substrate that comprises zinc oxide material and a conducting layer joined to the substrate to define a rectifying barrier at the junction of the substrate and the conducting layer, wherein the conducting layer comprises a conducting metal oxide, and wherein the zinc oxide material is a ternary oxide or an alloy thereof.
A method of forming a Schottky-like contact comprising the steps:
- (a) providing a substrate that comprises zinc oxide material, wherein the zinc oxide material is a ternary oxide or an alloy thereof;
- and
- (b) fabricating a layer comprising a conducting metal oxide on the substrate to form a rectifying barrier junction between the metal oxide layer and the zinc oxide material.
Dependencies are inferred from the claim text.