Solid-state image sensor and imaging device having connection portions in circumference region

An imaging device comprising a solid-state image sensor having a plurality of pixels, the solid-state image sensor, the plurality of pixels having a corresponding plurality of photoelectric conversion elements, the plurality of pixels and corresponding photoelectric elements being disposed in an array on a plane having an x-axis and a y-axis, includes:

• a plurality of lower electrode that respectively correspond to the plurality of pixels;
• a photoelectric conversion layer that is stacked on the lower electrodes;
• a sensor region in which each of the plurality of photoelectric conversion elements is positioned, the sensor region has a center point positioned at the intersection of the x-axis and the y-axis;
• an upper electrode stacked on the photoelectric conversion layer;
• a wiring portion capable of supplying a voltage to the upper electrode to generate an electric field between the upper electrode and the lower electrode;
• and
• a plurality of connection portions connecting the wiring portion and the upper electrode, the plurality of connection portions being disposed in a circumference region which is a region other than the sensor region, each of the photoelectric conversion elements including one of the lower electrodes, a part of the photoelectric conversion layer corresponding to the one of the lower electrodes and a part of the upper electrode corresponding to the one of the lower electrodes,
• wherein the plurality of connection portions is disposed in a symmetrical arrangement with respect to the x-axis and also in a symmetrical arrangement with respect to the y-axis so as to achieve a four-fold symmetrical arrangement relative to the center point of the sensor region, and
• wherein the upper electrode envelopes the plurality of connection portions.