Solid-state image sensing device
AssigneeRenesas Electronics Corporation
InventorYasutaka Nakashiba
Life of this patent
Estimating the term…
Abstract
The solid-state image sensing device is provided with an interconnect substrate, a solid-state image sensing chip and an under-filling resin. The solid-state image sensing chip is flip-chip mounted on the interconnect substrate. The solid-state image sensing chip takes a picture of an object to be imaged by photoelectrically conversion converting light incident on the back surface of the solid-state image sensing chip. An under-filling resin is used to fill the gap between the interconnect substrate and the solid-state image sensing chip. The under-filling resin serves to block light which is used to take an image by the solid-state image sensing chip.
Claims19
A solid-state image sensing device, comprising:
- an interconnect substrate having an entirety of an upper surface that is continuous and substantially flat;
- a solid-state image sensing chip having an entire back surface that is substantially flat and a front surface that is on the side opposite to said back surface, said solid-state image sensing chip being flip-chip mounted on said upper surface of said interconnect substrate and operable to take a picture of an object to be imaged by photoelectrically converting light incident on the back surface of said solid-state image sensing chip with the back surface directly contacting the object;
- a gap defining a volume provided uniformly between i) said front surface of said solid-state image sensing chip and ii) a whole region of said interconnect substrate facing and located beneath said front surface of said solid-state image sensing chip;
- a light-blocking, under-filling resin filling an entirety of said gap and volume provided between said front surface of the solid-state image sensing chip and said interconnect substrate facing and located beneath said front surface of said solid-state image sensing chip, said under-filling resin filling said volume blocking light from entering said gap and said front face of the solid-state image sensing chip;
- and
- a light-blocking, side-filling resin covering side surfaces of said solid-state image sensing chip and side surfaces of said under-filling resin and blocking said light from entering the side surfaces of said solid-state image sensing chip, and
- wherein said side-filling resin is formed so as not to overlap with said solid-state image sensing chip in plan-view.
A solid-state image sensing device, comprising:
- an interconnect substrate having a first surface;
- a solid-state image sensing chip having a second surface, a third surface that is on the side opposite to the second surface, and a fourth surface located between the second surface and the third surface, the solid-state image sensing chip being mounted on the interconnect substrate so that the second surface faces the first surface and is operable to photoelectrically convert a light incidents on the third surface;
- a plurality of bumps formed between the first surface and the second surface;
- a first resin filling in between the first surface and the second surface and blocking a first light from a front surface of the chip;
- and
- a second resin being in contact with the fourth surface and blocking a second light from a side surface of the chip,
- wherein the first resin has an extended portion extended to outside of the second surface and the second resin is in contact with the extended portion.
Dependencies are inferred from the claim text.