STRAM with compensation element and method of making the same

A spin-transfer torque memory apparatus, comprising:

• a spin-transfer torque memory unit comprising:
• a free magnetic layer;
• a reference magnetic element;
• and
• an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element;
• and
• a compensation element adjacent to the spin-transfer torque memory unit, the compensation element applying a bias field on the magnetization orientation of the free magnetic layer, wherein the bias field is configured to be set after a magnetic property of the spin-transfer torque memory unit is measured.

A magnetic tunneling junction, comprising:

• a free magnetic layer;
• a reference magnetic element;
• an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element;
• and
• a compensation element adjacent to the free magnetic layer, the compensation element applying a bias field on the magnetization orientation of the free magnetic layer, the bias field comprising a first vector component parallel to an axis of the free magnetic layer and a second vector component orthogonal to the axis of the free magnetic layer, wherein the bias field reduces a current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.