Semiconductor device with work function adjusting layer having varied thickness in a gate width direction and methods of making same
AssigneeGlobalfoundries Inc.
InventorsSteven Langdon, Stefan Flachowsky, Thilo Scheiper
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Abstract
Disclosed herein is a semiconductor device that includes a semiconducting substrate and a work-function adjusting layer positioned at least partially in the semiconducting substrate, the work-function adjusting layer having a middle section, opposing ends and an end region located proximate each of said opposing ends and a gate electrode positioned above the work-function adjusting layer. Each of the end regions has a maximum thickness that is at least 25% greater than an average thickness of the middle section of the work-function adjusting layer.
Claims16
A semiconductor device, comprising:
- a semiconducting substrate;
- a work-function adjusting layer positioned at least partially in said semiconducting substrate;
- and
- a gate electrode positioned above said work-function adjusting layer, said work-function adjusting layer having an axial length that extends in a direction that corresponds to a gate width of said gate electrode, wherein said work-function adjusting layer comprises a middle section and opposing ends disposed along said axial length, and an end region located proximate each of said opposing ends, each of said end regions having a maximum thickness that is at least 25% greater than an average thickness of said middle section of said work-function adjusting layer.
A semiconductor device, comprising:
- a semiconducting substrate;
- a work-function adjusting layer positioned at least partially in said semiconducting substrate;
- and
- a gate electrode positioned above said work-function adjusting layer, said work-function adjusting layer having an axial length that extends in a direction that corresponds to a gate width of said gate electrode, wherein said work-function adjusting layer comprises a middle section and opposing ends disposed along said axial length, and an end region located proximate each of said opposing end, each of said end regions having a maximum thickness that is at least 30-70% greater than an average thickness of said middle section of said work-function adjusting layer.
A semiconductor device, comprising:
- a semiconducting substrate;
- a work-function adjusting layer comprised of silicon germanium positioned at least partially in said semiconducting substrate;
- and
- a gate electrode positioned above said work-function adjusting layer, said work-function adjusting layer having an axial length that extends in a direction that corresponds to a gate width of said gate electrode, wherein said work-function adjusting layer comprises a middle section and opposing ends disposed along said axial length, and an end region located proximate each of said opposing ends, each of said end regions having a maximum thickness that is at least 3 nm greater than an average thickness of said middle section of said work-function adjusting layer and each of said end regions extend along an axial length of said work-function adjusting layer by a distance that is equal to at least 10% of said axial length;
- and
- a gate electrode positioned above said work-function adjusting layer.
Dependencies are inferred from the claim text.