Semiconductor device and method of manufacturing the same
AssigneeInstitute of Microelectronics, Chinese Academy of Sciences
InventorsWenwu Wang, Kai Han, Shijie Chen, Xiaolei Wang, Dapeng Chen
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Abstract
A semiconductor device is provided. A multi-component high-k interface layer containing elements of the substrate is formed from an ultra-thin high-k dielectric material in a single-layer structure of atoms by rapid annealing in the manufacturing of a CMOS transistor by the replacement gate process, and a high-k gate dielectric layer with a higher dielectric constant and a metal gate layer are formed thereon. The EOT of the device is effectively decreased, and the diffusion of atoms in the high-k gate dielectric layer from an upper level thereof is effectively prevented by the optimized high-k interface layer at high-temperature treatment.
Claims6
A semiconductor, comprising:
- a semiconductor substrate having a first region and a second region, wherein the first region and the second region are isolated from each other by an isolation region;
- a first gate stack formed on the first region, and a second gate stack formed on the second region;
- and
- a source region and a drain region belonging to the first region and the second region, respectively;
- wherein the first gate stack comprises:
- a first high-k interface layer on the semiconductor substrate in the first region;
- a first high-k gate dielectric layer on the first high-k interface layer;
- and a first metal gate layer on the first high-k gate dielectric layer;
- the second gate stack comprises:
- a second high-k interface layer on the semiconductor substrate in the second region;
- a second high-k gate dielectric layer on the second high-k interface layer;
- and a second metal gate layer on the second high-k gate dielectric layer;
- and
- the material of the first and second high-k interface layers comprises elements of the material of the substrate, and dielectric constants of the first and second high-k gate dielectric layers are higher than those of the first and second high-k interface layers, respectively.
Dependencies are inferred from the claim text.