Silicon-carbide MOSFET cell structure and method for forming same

A semiconductor device comprising:

• at least a first and a second semiconductor cell each comprising material regions extending in a Z direction, the regions spaced apart in an X direction;
• the first and the second semiconductor cells each comprising:
• a substrate;
• a drain contact on a first surface of the substrate;
• an epitaxial layer on a second surface of the substrate, the second surface opposite the first surface, the epitaxial layer doped a first dopant type;
• a first doped region extending in a Y direction from an upper surface of the epitaxial layer and doped a second dopant type;
• a first and a second sources spaced apart in the X direction, disposed within the first doped region, and doped the first dopant type, the first and second sources formed in a self-aligned manner relative to the first doped region;
• source rungs in the first doped region, each source rung connecting the first and second sources at a different location along the first and second sources, the source rungs alternating with first doped regions and formed in a self-aligned manner relative to the first and second sources, the source rungs comprising dopants of the first dopant type;
• and
• wherein an area of the source rungs and an area of the first doped regions are independently determinable responsive to a contact resistance of the source rung and a contact resistance of the first doped region.