Semiconductor device limiting electrical discharge of charge
AssigneeSanken Electric Co., Ltd.
InventorSatoshi Kondou
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a source region embedded in the surface of the second semiconductor region, a drain region embedded in the surface of the first semiconductor region separated from the second semiconductor region, a gate electrode located on the second semiconductor region, an insulation film located on the first semiconductor region between the second semiconductor region and the drain region, a voltage dividing element dividing the voltage between the gate electrode and the drain region, and a charge transfer limiting element limiting transfer of charge from the voltage dividing element to the drain region.
Claims6
A semiconductor device, comprising:
- a second conductive type first semiconductor region;
- a first conductive type second semiconductor region embedded in a part of an upper surface of the first semiconductor region;
- a second conductive type source region embedded in a part of an upper surface of the second semiconductor region;
- a second conductive type drain region embedded in a part of the upper surface of the first semiconductor region separated from the second semiconductor region;
- a gate electrode located on the second semiconductor region between the source region and the drain region;
- an insulation film located on the first semiconductor region between the second semiconductor region and the drain region;
- a voltage dividing element which is located on the insulation film and configured to divide a voltage between the gate electrode and the drain region;
- and
- a charge transfer limiting element connected between the voltage dividing element and the drain region and configured to limit transfer of charge from the voltage dividing element to the drain region.
A semiconductor device, comprising:
- a substrate;
- a source region provided in a part of an upper surface of the substrate;
- a drain region provided in a part of the upper surface of the substrate separated from the source region;
- a gate electrode located on the substrate between the source region and the drain region;
- an insulation film located on the upper surface of the substrate between the gate electrode and the drain region;
- a voltage dividing element which is located on the insulation film and configured to divide a voltage between the gate electrode and the drain region;
- and
- a charge transfer limiting element connected between the voltage dividing element and the drain region and configured to limit transfer of charge from the voltage dividing element to the drain region.
Dependencies are inferred from the claim text.