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US 8,507,977 B2Granted
Semiconductor device and manufacturing method of the same
AssigneeSony Corporation
InventorYuji Sasaki
Life of this patent
Estimating the term…
Abstract
Disclosed herein is a semiconductor device including: a first conductivity type semiconductor base body; a first conductivity type pillar region; second conductivity type pillar regions; element and termination regions provided in the first and second conductivity type pillar regions, transistors being formed in the element region, and no transistors being formed in the termination region; body regions; a gate insulating film; gate electrodes; source regions; and body potential extraction regions, wherein voids are formed in the second conductivity type pillar regions of the termination region.
Claims6
A semiconductor device, comprising:
- a semiconductor body;
- a plurality of first semiconductor regions in the first semiconductor body;
- a plurality of second semiconductor regions located between adjacent ones of the first semiconductor regions;
- the first and second semiconductor regions having both element and termination regions,
- transistors are formed in the element region of the first and second semiconductor regions, and wherein there are no transistors formed in the termination region of the first and second semiconductor regions;
- each transistor in the element region has portions formed at a surface of a corresponding first semiconductor region and in contact with a corresponding second semiconductor region;
- and
- wherein a void is formed in at least some of the second regions in the termination region.
5 more elements
Dependencies are inferred from the claim text.