Three-dimensional semiconductor memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsJaehun Jeong, Hansoo Kim, Jaehoon Jang, Sunil Shim
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Abstract
In a three-dimensional semiconductor memory device, the device includes a semiconductor substrate having a recessed region, an active pattern extending in a direction transverse to the recessed region, an insulating pillar being adjacent to the active pattern and extending in the direction transverse to the recessed region, and a lower select gate facing the active pattern and extending horizontally on the semiconductor substrate. The active pattern is disposed between the insulating pillar and the lower select gate.
Claims21
A three-dimensional semiconductor memory device comprising:
- a semiconductor substrate having a recessed region;
- an active pattern extending from the recessed region in a direction perpendicular to the substrate;
- an insulating pillar being adjacent to the active pattern and extending in the direction perpendicular to the substrate;
- and
- a lower select gate facing the active pattern and extending horizontally on the semiconductor substrate.
A three-dimensional semiconductor memory device comprising:
- a semiconductor substrate having a recessed region;
- an active pattern extending from the recessed region in a direction perpendicular to the substrate;
- and
- a lower select gate facing the active pattern and extending horizontally on the semiconductor substrate.
A three-dimensional semiconductor memory device comprising:
- a semiconductor substrate having a recessed region;
- an active pattern extending from the recessed region in a direction perpendicular to the substrate;
- an insulating pillar adjacent to the active pattern and extending in the direction perpendicular to the substrate;
- and
- wherein the active pattern contacts a lower surface of the recessed region and wherein a bottom surface of the active pattern is lower than a bottom surface of the insulating pillar.
Dependencies are inferred from the claim text.