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US 8,507,961 B2Granted
Solid-state imaging device
AssigneeSony Corporation
InventorsNoriko Takagi, Hiroyuki Mori
Life of this patent
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Abstract
A solid-state imaging device has improved operating characteristics including a greater withstand voltage and a decrease in the operational noise for the transistors of the device. The solid-state imaging device includes at least a photoelectric converting portion and a plurality of field effect transistors, preferably a thickness of a gate insulating film for the readout and amplifier transistors are different than gate thicknesses of other transistors.
Claims2
A MOS type solid-state imaging device, comprising:
- a unit pixel including at least a photoelectric converting portion, a readout transistor and a plurality of other transistors, including a reset transistor, and amplifier transistor;
- and wherein a thickness of a gate insulating film for the amplifier transistor that converts and amplifies a signal of said photoelectric converting portion into a voltage or current signal is smaller than the thickness of gate insulating film for the other transistors in said unit pixel.
Dependencies are inferred from the claim text.