Solid-state imaging device

A solid-state imaging device, comprising:

• a pixel including a photoelectric conversion section, and a conversion section that converts a signal generated by photoelectric conversion into a pixel signal, wherein
• a gate electrode of at least one transistor in the pixel includes a first section formed directly above a channel, and a second section formed over a portion of a substrate near the channel,
• an impurity combination for implantation to the first section/the second section is any of p-type/no-doped, n-type/no-doped, n-type/p-type, and p-type/n-type, and further comprising an element isolation region has a gate insulation film formed over the substrate and directly under the gate electrode, wherein a thickness of the gate insulation film is substantially the same across the substrate, the element isolation region being formed of first and second impurity regions in the substrate wherein the second section of the gate electrode formed directly above the first and second impurity regions, wherein the first impurity region is formed to a depth that is lower than a depth of the second impurity region, and the second impurity region is wider than the first impurity region, the element isolation region having no insulation material within the first and second impurity regions are formed, wherein the gate electrode extends wider than a channel portion and the channel portion under the gate electrode has a different doping type than adjacent regions of the gate electrode, the adjacent regions extending over the element isolation region.

An imaging apparatus comprising:

• a solid-state imaging part including a pixel with a photoelectric conversion section and a conversion section configured to convert an electric charge generated by photoelectric conversion into a pixel signal, wherein
• an element isolation region has a gate insulation film formed over a substrate and directly under a gate electrode, wherein a thickness of the gate insulation film is substantially the same across the substrate, the element isolation region being formed of first and second impurity regions in the substrate wherein a gate extension of the gate electrode formed directly above the first and second impurity regions, wherein the first impurity region is formed to a depth that is lower than a depth of the second impurity region, and the second impurity region is wider than the first impurity region;
• the element isolation region having no insulation material within the first and second impurity regions are formed;
• and a driving control part including a control section configured to control driving of a transistor in the pixel included in said solid-state imaging part, wherein the gate electrode extends wider than a channel portion and the channel portion under the gate electrode has a different doping type than adjacent regions of the gate electrode, the adjacent regions extending over the element isolation region.