Transistor and method for forming the same
AssigneeInstitute of Microelectronics, Chinese Academy of Sciences
InventorsHaizhou Yin, Huilong Zhu, Zhijong Luo
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Abstract
The present invention relates to a transistor and the method for forming the same. The transistor of the present invention comprises a semiconductor substrate; a gate dielectric layer formed on the semiconductor substrate; a gate formed on the gate dielectric layer; a source region and a drain region located in the semiconductor substrate and on respective sides of the gate, wherein at least one of the source region and the drain region comprises at least one dislocation; an epitaxial semiconductor layer containing silicon located on the source region and the drain region; and a metal silicide layer on the epitaxial semiconductor layer.
Claims7
A transistor comprising:
- a semiconductor substrate;
- a gate dielectric layer formed on the semiconductor substrate;
- a gate formed on the gate dielectric layer;
- a source region and a drain region located in the semiconductor substrate and on respective sides of the gate, wherein at least one of the source region and the drain region comprises at least one dislocation;
- an epitaxial semiconductor layer containing silicon located on the source region and the drain region;
- and
- a metal silicide layer on the epitaxial semiconductor layer,
- wherein at least one of the source region and the drain region comprises a first set of dislocations that are adjacent to the channel region and arranged in the direction perpendicular to the top surface of the semiconductor substrate, and the first set of dislocations comprises at least two dislocations.
Dependencies are inferred from the claim text.