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US 8,507,956 B2Granted
Wire structure, method for fabricating wire, thin film transistor substrate, and method for fabricating the thin film transistor substrate
AssigneeSamsung Display Co., Ltd.
InventorsJe-Hun Lee, Chang-Oh Jeong, Eun-Guk Lee, Do-Hyun Kim
Life of this patent
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Abstract
Provided are a wire structure, a method for fabricating a wire, a thin film transistor (TFT) substrate and a method for fabricating a TFT substrate. The wire structure includes a barrier layer formed on a substrate and including a copper layer and a copper solid solution layer.
Claims26
A thin film transistor substrate comprising:
- a substrate;
- a gate line disposed on the substrate;
- a data line crossing the gate line;
- and
- a thin film transistor connected to the gate line and the data line respectively;
- wherein a gate electrode of the thin film transistor comprises a first layer comprising copper, and a second layer comprising copper solid solution, the copper solid solution comprising copper and oxygen.
3 more elements
A thin film transistor substrate comprising:
- a substrate;
- a gate line disposed on the substrate;
- a data line crossing the gate line;
- and
- a thin film transistor connected to the gate line and the data line respectively;
- wherein a gate electrode of the thin film transistor comprises a first layer comprising copper, and a second layer comprising copper solid solution, the copper solid solution comprising copper, oxygen, and nitrogen.
3 more elements
A thin film transistor substrate comprising:
- a substrate;
- a gate line disposed on the substrate;
- a data line crossing the gate line;
- and
- a thin film transistor connected to the gate line and the data line respectively;
- wherein a gate electrode of the thin film transistor comprises first and second layers comprising copper solid solution, and a third layer comprising copper, the copper solid solution comprising copper and oxygen.
3 more elements
A thin film transistor substrate comprising:
- a substrate;
- a gate line disposed on the substrate;
- a data line crossing the gate line;
- and
- a thin film transistor connected to the gate line and the data line respectively;
- wherein a gate electrode of the thin film transistor comprises first and second layers comprising copper solid solution, and a third layer comprising copper, the copper solid solution comprising copper, oxygen, and nitrogen.
3 more elements
Dependencies are inferred from the claim text.