Semiconductor wafer, semiconductor device, and method for producing semiconductor wafer
AssigneeSumitomo Chemical Company, Limited
InventorsSadanori Yamanaka, Tomoyuki Takada, Masahiko Hata
Life of this patent
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Abstract
To improve the flatness of the surface and improve the reliability of a semiconductor device when expitaxially growing semiconductor crystal layers of different types on a single silicon wafer, provided is a semiconductor wafer which includes: a base wafer having a silicon crystal in the surface thereof, the silicon crystal having a first dent and a second dent; a first Group IVB semiconductor crystal located in the first dent and exposed; a second Group IVB semiconductor crystal located in the second dent; and a Group III-V compound semiconductor crystal located above the second Group IVB semiconductor crystal in the second dent and exposed.
Claims24
A semiconductor wafer, comprising:
- a base wafer having a silicon crystal in a surface thereof, the silicon crystal having a first dent and a second dent;
- a first Group IVB semiconductor crystal located in the first dent and exposed;
- a second Group IVB semiconductor crystal located in the second dent;
- and
- a Group III-V compound semiconductor crystal located above the second Group IVB semiconductor crystal in the second dent and exposed.
A semiconductor wafer comprising:
- a base wafer having a silicon crystal in a surface thereof;
- an inhibition member that is located on the base wafer, has a first opening leading to the silicon crystal, a second opening leading to the silicon crystal, and a third opening leading to the silicon crystal, and inhibits growth of a semiconductor crystal;
- a first Group IVB semiconductor crystal located in the first opening and exposed;
- a second Group IVB semiconductor crystal located in the second opening;
- a Group III-V compound semiconductor crystal located above the second Group IVB semiconductor crystal and exposed;
- and
- a third Group IVB semiconductor crystal located in the third opening.
A method for producing a semiconductor wafer, the method comprising;
- forming a first dent and a second dent in a silicon crystal of a base wafer that has the silicon crystal in a surface thereof;
- forming a first Group IVB semiconductor crystal in the first dent;
- forming a second Group IVB semiconductor crystal in the second dent;
- and
- forming a Group III-V compound semiconductor crystal above the second Group IVB semiconductor crystal in the second dent,
- wherein the first Group IVB semiconductor crystal and the Group III-V compound semiconductor crystal are exposed.
A method for producing a semiconductor wafer, the method comprising:
- forming an inhibition member on a base wafer having a silicon crystal in a surface thereof, the inhibition member inhibiting growth of a semiconductor crystal;
- forming a first opening, a second opening, and a third opening in the inhibition member, the first opening leading to the silicon crystal, the second opening leading to the silicon crystal, and the third opening leading to the silicon crystal;
- forming a first Group IVB semiconductor crystal in the first opening;
- forming a second Group IVB semiconductor crystal in the second opening;
- fanning a Group III-V compound semiconductor crystal above the second Group IVB semiconductor crystal in the second opening;
- and
- growing a third Group IVB semiconductor crystal in the third opening,
- wherein the first Group IVB semiconductor crystal, the Group III-V compound semiconductor crystal, and the third Group IVB semiconductor crystal are exposed.
Dependencies are inferred from the claim text.