Semiconductor device
AssigneeFujitsu Limited
InventorsMasato Nishimori, Atsushi Yamada
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Abstract
A semiconductor device includes a substrate, a carrier transit layer disposed above the substrate, a compound semiconductor layer disposed on the carrier transit layer, a source electrode disposed on the compound semiconductor layer, a first groove disposed from the back of the substrate up to the inside of the carrier transit layer while penetrating the substrate, a drain electrode disposed in the inside of the first groove, a gate electrode located between the source electrode and the first groove and disposed on the compound semiconductor layer, and a second groove located diagonally under the source electrode and between the source electrode and the first groove and disposed from the back of the substrate up to the inside of the carrier transit layer while penetrating the substrate.
Claims4
A semiconductor device, comprising:
- a substrate;
- a carrier transit layer disposed above the substrate;
- a compound semiconductor layer disposed on the carrier transit layer;
- a source electrode disposed on the compound semiconductor layer;
- a first groove disposed from a back of the substrate up to an inside of the carrier transit layer while penetrating the substrate;
- a drain electrode disposed in the inside of the first groove;
- a gate electrode located between the source electrode and the first groove and disposed on the compound semiconductor layer;
- and
- a second groove located diagonally under the source electrode and between the source electrode and the first groove and disposed from the back of the substrate up to another inside of the carrier transit layer while penetrating the substrate.
Dependencies are inferred from the claim text.