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US 8,507,948 B2Granted
Junctionless accumulation-mode devices on prominent architectures, and methods of making same
AssigneeIntel Corporation
InventorsAnnalisa Cappellani, Kelin J. Kuhn, Rafael Rios, Titash Rakshit, Sivakumar P. Mudanai
Life of this patent
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Abstract
A junctionless accumulation-mode (JAM) semiconductive device is isolated from a semiconductive substrate by a reverse-bias band below a prominent feature of a JAM semiconductive body. Processes of making the JAM device include implantation and epitaxy.
Claims17
A junctionless accumulation mode (JAM) device, comprising:
- a semiconductive first body including a channel region bounded by junctionless source- and drain regions, wherein the semiconductive first body is located in a prominence that extends from and is part of a bulk semiconductive substrate, and wherein the semiconductive first body includes a first side, an edge, and a second side that is parallel-planar to the first side;
- a gate electrode that is wrapped around the prominence on each of the first side, the edge, and the second side;
- and
- a semiconductive second body disposed opposite the edge and between the semiconductive first body and the bulk semiconductive substrate, wherein the semiconductive second body is differently doped from the semiconductive first body, and wherein the semiconductive second body causes a differential bias with the semiconductive first body, wherein the semiconductive second body also extends from and is part of the bulk semiconductive substrate.
1 more element
A junctionless accumulation mode (JAM) device, comprising:
- a germanium semiconductive first body including a channel region bounded by junctionless source- and drain regions, wherein the semiconductive first body is located in a prominence that extends from a bulk semiconductive substrate, and wherein the semiconductive first body includes a first side, an edge, and a second side that is parallel-planar to the first side;
- a gate electrode that is wrapped around the prominence on each of the first side, the edge, and the second side;
- and
- a gallium arsenide semiconductive second body disposed opposite the edge and between the semiconductive first body and the bulk semiconductive substrate, wherein the semiconductive second body is differently doped from the semiconductive first body, and wherein the semiconductive second body causes a differential bias with the semiconductive first body.
1 more element
A junctionless accumulation mode (JAM) device, comprising:
- a semiconductive first body including a channel region and having a first length and wherein the semiconductive first body is bounded by source- and drain bodies, wherein the semiconductive first body is located in a prominence that extends from and is part of a bulk semiconductive substrate, and wherein the semiconductive first body includes a first side, an edge, and a second side that is parallel-planar to the first side;
- a gate electrode having a third length and that is wrapped around the prominence on each of the first side, the edge, and the second side;
- and
- a semiconductive second body having a second length and that is disposed opposite the edge and between the semiconductive first body and the bulk semiconductive substrate, wherein the semiconductive second body is differently doped from the semiconductive first body, and wherein the semiconductive second body causes a differential bias with the semiconductive first body;
- wherein the source- and drain bodies are qualitatively similarly doped as that of the semiconductive first body wherein the semiconductive second body abuts the channel region, and wherein the first length is the same as the third length.
2 more elements
Dependencies are inferred from the claim text.