Back to results
US 8,507,947 B2Granted
High quality GaN high-voltage HFETS on silicon
AssigneePower Integrations, Inc.
InventorsJamal Ramdani, John P. Edwards, Linlin Liu
Life of this patent
Estimating the term…
Abstract
Substrates of GaN over silicon suitable for forming electronics devices such as heterostructure field effect transistors (HFETs), and methods of making the substrates, are disclosed. Voids in a crystalline Al2O3 film on a top surface of a silicon wafer are formed. The top surface of the silicon wafer is along the <111> silicon crystal orientation. A plurality of laminate layers is deposited over the voids and the Al2O3 film. Each laminate layer includes an AlN film and a GaN film. A transistor or other device may be formed in the top GaN film.
Claims9
A GaN substrate comprising
- a silicon substrate having a top surface and a bottom surface along the <111> crystal orientation;
- a Al2O3 film over the top surface of the silicon substrate, wherein the Al2O3 film is crystalline;
- an amorphous film between the top surface of the silicon substrate and the Al2O3 film;
- and
- a plurality of laminate layers over the Al2O3 film, wherein each laminate layer includes a GaN film over a AlN film.
2 more elements
Dependencies are inferred from the claim text.