Light emitting device, method of fabricating the same and light emitting device package

A light emitting device package comprising:

• a package body;
• a first electrode layer and a second electrode layer disposed on the package body and electrically isolated from each other;
• and
• a light emitting device electrically connected to the first electrode layer and the second electrode layer,
• wherein the light emitting device includes a first nitride semiconductor and a second nitride semiconductor, each of which includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and a connection layer formed between the second conductivity-type semiconductor layer of the second nitride semiconductor and the first conductivity-type semiconductor layer of the first nitride semiconductor,
• wherein the first nitride semiconductor and the second nitride semiconductor are connected by the connection layer, and the light emitting device package further comprises electrodes formed on at least a part of the second conductivity-type semiconductor layer of the first nitride semiconductor, at least a part of the first conductivity-type semiconductor layer of the second nitride semiconductor, and at least a part of the second conductivity-type semiconductor layer of the second nitride semiconductor.

A lighting system comprising:

• light emitting device packages, each of which includes at least one light emitting device;
• a circuit board electrically connected to the light emitting device packages;
• a substrate to support the light emitting device packages and the circuit board;
• and
• optical members to transmit light emitted from the light emitting device packages,
• wherein the at least one light emitting device includes a first nitride semiconductor and a second nitride semiconductor, each of which includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and a connection layer formed between the second conductivity-type semiconductor layer of the second nitride semiconductor and the first conductivity-type semiconductor layer of the first nitride semiconductor,
• wherein the first nitride semiconductor and the second nitride semiconductor are connected by the connection layer, and the lighting system further comprises electrodes formed on at least a part of the second conductivity-type semiconductor layer of the first nitride semiconductor, at least a part of the first conductivity-type semiconductor layer of the second nitride semiconductor, and at least a part of the second conductivity-type semiconductor layer of the second nitride semiconductor.