Semiconductor light-emitting element

A method for producing a semiconductor light-emitting element, comprising:

• forming a semiconductor light-emitting stacked body including a first semiconductor layer formed on a growth substrate, an active layer formed on the first semiconductor layer, and a second semiconductor layer formed on the active layer;
• forming a second electrode including at least one linear second electrode piece on a surface of the second semiconductor layer so as to be in ohmic contact with the second semiconductor layer;
• joining the semiconductor light-emitting stacked body having the second electrode formed therein with a support substrate;
• removing the growth substrate from the semiconductor light-emitting stacked body;
• forming a first electrode including at least one linear first electrode piece on a surface of the first semiconductor layer so as to be in ohmic contact with the first semiconductor layer;
• and
• forming a plurality of conical projections on an area of the first semiconductor layer where the first electrode is not formed, wherein
• during forming the first electrode, the first electrode piece and the second electrode piece are disposed so as not to overlap with each other in a stacked direction of the semiconductor light-emitting stacked body and to be parallel with each other when viewed from above,
• during forming the plurality of conical projections, the plurality of conical projections disposed between the first and second electrode pieces disposed in parallel with each other have extension axes that form an angle of ±26 degrees with respect to the extension direction of the first and second electrode pieces.