Single crystal compound semiconductor substrate
AssigneeDenso Corporation
InventorsHiroaki Fujibayashi, Masami Naito, Nobuyuki Ooya
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Abstract
A compound semiconductor substrate includes a first substrate and a second substrate made of single crystal silicon carbide. In each of the first substrate and the second substrate, one surface is a (000-1) C-face and an opposite surface is a (0001) Si-face. The first substrate and the second substrate are bonded to each other in a state where the (0001) Si-face of the first substrate and the (0001) Si-face of the second substrate face each other, and the (000-1) C-face of the first substrate and the (000-1) C-face of the second substrate are exposed.
Claims3
A compound semiconductor substrate comprising a first substrate and a second substrate made of single crystal silicon carbide, wherein
- in each of the first substrate and the second substrate, one surface is a (000-1) C-face and an opposite surface is a (0001) Si-face, and
- the first substrate and the second substrate are bonded to each other in a state where the (0001) Si-face of the first substrate and the (0001) Si-face of the second substrate face each other, and the (000-1) C-face of the first substrate and the (000-1) C-face of the second substrate are exposed.
Dependencies are inferred from the claim text.