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AssigneeSumitomo Chemical Company, Limited
InventorIsao Yahagi
Estimating the term…
An object of the present invention is to provide an organic thin film transistor a gate insulating film of which can be formed at a low temperature. The organic thin film transistor of the present invention includes a source electrode, a drain electrode, an organic semiconductor layer which becomes a current path between the source electrode and the drain electrode, a gate electrode which controls an electric current passing through the current path, and an insulating layer which insulates the organic semiconductor layer from the gate electrode, wherein the insulating layer is formed of a cured substance of a composition containing a first compound having, in the molecule, two or more groups that produce a functional group which reacts with an active hydrogen group by electromagnetic radiations or heat, and a second compound having two or more active hydrogen groups in the molecule, where at least one of the first compound and the second compound is a polymer compound.
An organic thin film transistor comprising a source electrode, a drain electrode, an organic semiconductor layer that becomes a current path between the source electrode and the drain electrode, a gate electrode that controls an electric current passing through the current path, and an insulating layer that insulates the organic semiconductor layer from the gate electrode, wherein
A method for manufacturing an organic thin film transistor comprising a source electrode, a drain electrode, an organic semiconductor layer that becomes a current path between the source electrode and the drain electrode, a gate electrode that controls an electric current passing through the current path, and an insulating layer that insulates the organic semiconductor layer from the gate electrode, wherein
Dependencies are inferred from the claim text.