Control and readout of electron or hole spin

An electronic device for control and readout of electron or hole spin of a single dopant atom in silicon, comprising:

• a silicon substrate in which there are one or more ohmic contact regions;
• an insulating region on top of the substrate;
• first and second spaced-apart barrier gates on top of the insulating region;
• an island of a Single Electron Transistor (SET) in the substrate beneath the first and second spaced-apart barrier gates defined by the barrier gates;
• a third gate overlying both the first and second barrier gates, but insulated from them and the SET is controlled by the first, second and third gates;
• a gate-induced charge layer (GICL) in the substrate beneath the third gate;
• wherein the single dopant atom is encapsulated in the substrate outside the region of the GICL, and a fourth gate is in close proximity to the single dopant atom;
• and wherein the device further comprises a fourth gate induced intermittent spin-dependent charge tunnel between the dopant atom and the SET island;
• and a third or fourth gate induced Electron Spin Resonance (ESR) line in the vicinity of either the third or fourth gate, respectively and manipulating the spin of the electron or hole spin of the single dopant atom.