Back to results
US 8,507,888 B2Granted
Nonvolatile memory device and method for manufacturing same
AssigneeKabushiki Kaisha Toshiba
InventorsKenji Aoyama, Kazuhiko Yamamoto, Satoshi Ishikawa, Shigeto Oshino
Life of this patent
Estimating the term…
Abstract
According to one embodiment, a nonvolatile memory device includes a selection element layer and a nanomaterial aggregate layer. The selection element layer includes silicon. The nanomaterial aggregate layer is stacked on the selection element layer. The nanomaterial aggregate layer includes a plurality of micro conductive bodies and fine particles dispersed in a plurality of gaps between the micro conductive bodies. At least a surface of the fine particle is made of an insulating material other than silicon oxide.
Claims7
A nonvolatile memory device, comprising:
- a selection element layer including silicon;
- and
- a nanomaterial aggregate layer stacked on the selection element layer, the nanomaterial aggregate layer including a plurality of micro conductive bodies and fine particles dispersed in a plurality of gaps between the micro conductive bodies, at least a surface of the fine particles being made of an insulating material including silicon and nitrogen.
Dependencies are inferred from the claim text.