Resistance change memory and method of manufacturing the same

A resistance change memory comprising:

• a first interconnect line extending in a first direction;
• a second interconnect line extending in a second direction intersecting with the first direction;
• a cell unit which is provided at the intersection of the first interconnect line and the second interconnect line and which includes a memory element and a non-ohmic element that are connected in series;
• the non-ohmic element having a first semiconductor layer and a conductive layer adjacent to the first semiconductor layer,
• the first semiconductor layer including a first semiconductor region, a second semiconductor region and
• at least one diffusion buffering region, the first semiconductor region provided between the conductive layer and the second semiconductor region,
• wherein the diffusion buffering region is different in crystal structure from the first semiconductor layer except for the diffusion buffering region in the first semiconductor layer,
• the concentration of an impurity in the first semiconductor region is higher than the concentration of an impurity in the second semiconductor region, and
• the diffusion buffering region is disposed in the first semiconductor region.