Method for producing a contact structure of a semiconductor component

#1. Field of the Invention

#The invention relates to a method for the production of a contact structure of a semiconductor component. The invention further relates to an intermediate product in the production of a semiconductor component.

#2. Background Art

#FIG. 1 shows a semiconductor substrate after application of a dielectric layer and a resist layer;

#FIG. 2 shows the semiconductor substrate according to FIG. 1 after partially removing the resist layer;

#FIG. 3 shows the semiconductor substrate according to FIG. 2 after opening of the dielectric layer; and

#The Figures are only diagrammatic illustrations, in other words they are not to scale.

#The following is a description of a first embodiment of the invention with reference to FIGS. 1 to 4. A semiconductor component 1 initially comprises a flat, in other words two-dimensional, semiconductor substrate 2 with a front side 3 and a back side 4 which is arranged opposite thereto. The semiconductor component 1 is in particular a solar cell. The semiconductor component 2 consists of a semiconductor material, in particular of silicon. Other semiconductor materials are however conceivable as well. In a first step, a passivation layer 5 is applied to the front side 3 of the semiconductor substrate 2, the passivation layer 5 also serving as an antireflection layer. The passivation layer 5 consists of a dielectric material, in other words it is electrically insulating. The passivation layer 5 advantageously consists of silicon nitride or silicon dioxide. It has a thickness of preferably less than 200 nm, in particular less than 100 nm.

#The semiconductor substrate 2 is then provided with a coating 6. The coating 6 is provided both on the front side 3 and on the back side 4. It covers in particular the entire passivation layer 5. It is of course conceivable as well for the coating 6 to be applied to only one of the sides 3, 4. The coating is in particular a resist layer. It is applied by immersing the semiconductor substrate 2 into a resist solution. The process is thus referred to as dip coating. As a result, a thin resist layer is applied to both sides 3, 4 of the semiconductor substrate 2 when the semiconductor substrate 2 is immersed into the resist. The resist is resistant to subsequent etching and/or electrolyte baths.