Methods and devices for forming nanostructure monolayers and devices including such monolayers
AssigneeSanDisk Corporation
InventorsJian Chen, Karen Chu Cruden, Xiangfeng Duan, Chao Liu, J. Wallace Parce
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Abstract
Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices).
Claims45
A method for forming a nanostructure array, the method comprising:
- providing a first layer;
- providing nanostructures dispersed in a solution comprising a liquid form of a spin-on-dielectric, wherein the liquid form of the spin-on-dielectric comprises a silsesquioxane, and wherein the nanostructures comprise a silsesquioxane ligand coating;
- disposing the solution on the first layer, whereby the nanostructures form a monolayer array on the first layer;
- and
- curing the liquid form of the spin-on-dielectric to provide a solid form of the spin-on-dielectric.
A method for forming a nanostructure array, the method comprising:
- providing a first layer;
- providing nanostructures dispersed in a solution comprising a liquid form of a spin-on-dielectric, wherein each of the nanostructures comprises a silsesquioxane ligand associated with a surface of the nanostructure;
- disposing the solution on the first layer, whereby the nanostructures form a monolayer array on the first layer;
- and
- curing the liquid form of the spin-on-dielectric to provide a solid form of the spin-on-dielectric, wherein the solid form of the spin-on-dielectric comprises silicon oxide, aluminum oxide, hafnium oxide, lanthanum oxide, or tantalum oxide.
Dependencies are inferred from the claim text.