Methods for forming dielectric layers
AssigneeApplied Materials, Inc.
InventorsLucien Date, Paul William Turnbull
Life of this patent
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Abstract
Methods for forming a dielectric layer on a substrate are provided herein. In some embodiments a method for forming a dielectric layer on a substrate may include exposing the substrate to a first source gas comprising a silicon precursor and an oxidizer for a first period of time to form a first layer comprising silicon and oxygen; and exposing the substrate to a second source gas comprising a metal precursor and the silicon precursor for a second period of time to form a second layer comprising silicon and a metal, where in the first layer and the second layer form the dielectric layer.
Claims20
A method for forming a dielectric layer on a substrate, comprising:
- (a) exposing the substrate to a first source gas comprising a silicon precursor and an oxidizer for a first period of time to form a first layer comprising silicon and oxygen;
- and
- (b) exposing the substrate to a second source gas comprising a metal precursor and the silicon precursor for a second period of time to form a second layer comprising silicon and a metal, where in the first layer and the second layer form the dielectric layer.
A computer readable medium, having instructions stored thereon which, when executed by a controller, causes a process chamber having a substrate disposed therein to have a dielectric layer formed thereon by a method, the method comprising:
- (a) exposing the substrate to a first source gas comprising a silicon precursor and an oxidizer for a first period of time to form a first layer comprising silicon and oxygen;
- and
- (b) exposing the substrate to a second source gas comprising a metal precursor and the silicon precursor for a second period of time to form a second layer comprising silicon and a metal, wherein the first layer and the second layer form the dielectric layer.
Dependencies are inferred from the claim text.