Methods of removing noble metal-containing nanoparticles

A method of removing noble metal-containing particles from over a base, comprising:

• exposing the base and noble metal-containing particles to a composition that reduces adhesion between the noble metal-containing particles and the base;
• while exposing to said composition, spinning the base to apply forces to the noble metal-containing particles and thereby sweep at least some of the noble metal-containing particles off from the base;
• wherein the composition includes an etchant that etches the base and thereby undercuts the noble metal-containing particles;
• and
• wherein:
• the base comprises a photoresist surface and an oxide-containing surface;
• the noble metal-containing particles are adhered to both the photoresist surface and the oxide-containing surface;
• and
• the etchant comprises a mixture containing sulfuric acid and hydrogen peroxide.

A method of removing noble metal-containing particles from over two or more chemically different surfaces of a semiconductor wafer construction, comprising:

• spinning the construction;
• while spinning the construction, exposing the construction to a composition which reduces adhesion between the noble metal-containing particles and at least two of the chemically different surfaces;
• wherein the composition alters surface properties of the noble metal-containing particles;
• and
• wherein the composition includes etchant suitable for etching said at least two of the chemically different surfaces.

A method of removing noble metal-containing particles from over two or more chemically different surfaces of a semiconductor wafer construction, comprising:

• spinning the construction;
• while spinning the construction, exposing the construction to a composition which reduces adhesion between the noble metal-containing particles and at least two of the chemically different surfaces;
• and
• wherein:
• one of said at least two of the surfaces comprises photoresist;
• another of said at least two of the surfaces comprises silicon dioxide;
• and
• the etchant comprises a mixture containing sulfuric acid and hydrogen peroxide.