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US 8,507,381 B2Granted
Method for fabricating silicon and/or germanium nanowires
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsVincent Renard, Vincent Jousseaume, Michael Jublot
Life of this patent
Estimating the term…
Abstract
The invention relates to a method for fabricating silicon and/or germanium nanowires on a substrate, comprising a step of bringing a precursor comprising silicon and/or a precursor comprising germanium into contact with a compound comprising copper oxide present on the said substrate, by means of which growth of nanowires takes place.
Claims15
A method for fabricating silicon and/or germanium nanowires on a substrate, comprising:
- a step of contacting a precursor comprising silicon and/or a precursor comprising germanium in contact with a compound comprising copper oxide present on said substrate, by means of which growth of nanowires takes place, said substrate being a silicon substrate, optionally covered with a barrier layer against the diffusion of copper present in said compound,
- said step of contacting consisting of passing a stream of precursor comprising silicon and/or precursor comprising germanium over the compound comprising copper oxide, with a flow rate and for a time which are effective for obtaining growth of nanowires based on silicon and/or germanium.
Dependencies are inferred from the claim text.