Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Manufacturing International (Beijing) Corporation
InventorsYiying Zhang, Qiyang He
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Abstract
A semiconductor device and a manufacturing method thereof are disclosed. The method comprises: providing a substrate with a first dielectric layer and a gate, wherein the gate is embedded in the first dielectric layer and an upper portion of the gate is an exposed first metal; and covering only the exposed first metal with a conductive material that is harder to be oxidized than the first metal by a selective deposition. An advantage of the present invention is that the metal of the upper surface of the gate is prevented from being oxidized by covering the metal gate with the conductive material that is relatively harder to be oxidized, thereby facilitating the formation of an effective electrical connection to the gate.
Claims19
A method for manufacturing a semiconductor device, comprising:
- providing a substrate with a first dielectric layer and a gate, wherein the gate is embedded in the first dielectric layer and an upper portion of the gate is an exposed first metal;
- covering only the exposed first metal with a conductive material that is harder to be oxidized than the first metal by a selective deposition;
- and
- depositing a second dielectric layer such that the second dielectric layer covers the first dielectric layer and the conductive material.
A semiconductor device, comprising:
- a substrate;
- a metal gate and a first dielectric layer on the substrate, wherein the metal gate is embedded in the first dielectric layer and an upper portion of the metal gate is a first metal;
- a conductive material that covers an upper surface of the metal gate, wherein the conductive material is harder to be oxidized than the first metal;
- a second dielectric layer that covers the first dielectric layer and the conductive material;
- and
- a conductive contact that penetrates through the second dielectric layer and is connected to the conductive material.
Dependencies are inferred from the claim text.