Semiconductor device, method of manufacturing the same, and phase shift mask

A method of manufacturing a semiconductor device comprising:

• forming a first interlayer insulation film above a semiconductor substrate;
• forming a first trench in said first interlayer insulation film, said first trench surrounds an integrated part in which an integrated circuit is formed;
• forming a second trench in said first insulation film;
• forming first metal film in said first trench;
• forming second metal film in said second trench;
• forming a second interlayer insulation film above said first insulation film;
• forming a third trench in said second interlayer insulation film;
• forming a fourth trench in said second interlayer insulation film;
• forming a third metal film in said third trench, connected to said first metal film;
• and
• forming a fourth metal film in said fourth trench, connected to said second metal film,
• wherein said second trench is formed at an area of corner of a chip between said integrated circuit part and said first trench, incompletely surrounds said integrated part, and bends at least one time in plan view.

A method of manufacturing a semiconductor device comprising:

• forming a first interlayer insulation film above a semiconductor substrate;
• forming a first trench in said first interlayer insulation film, said first trench surrounds an integrated part in which an integrated circuit is formed;
• forming a second trench in said first insulation film;
• forming a first metal film in said first trench;
• and
• forming a second metal film in said second trench,
• wherein said second trench is formed at an area of corner of a chip between said integrated circuit part and said first trench, incompletely surrounds said integrated part, and bends at least one time in plan view.

A method of manufacturing a semiconductor device comprising:

• forming a first interlayer insulation film above a semiconductor substrate;
• forming a first opening in said first interlayer insulation film, said first opening surrounds an integrated part in which an integrated circuit is formed;
• forming a second opening in said first insulation film;
• forming a first metal films in said first opening;
• and
• forming a second metal films in said second opening,
• wherein said first opening and said second opening are formed by a dual damascene method, and said second opening is formed at an area of corner of a chip between said integrated circuit part and said first opening, incompletely surrounds said integrated part, and bends at least one time in plan view.