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US 8,507,371 B2Granted
Method of forming epitaxial semiconductor structure
AssigneeAthenaeum, LLC
InventorEric Ting-Shan Pan
Life of this patent
Estimating the term…
Abstract
A method of growing an epitaxial semiconductor structure is disclosed. The growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
Claims32
A method of forming an epitaxial semiconductor structure comprising the steps:
- providing a solid substrate board comprised substantially of non-semiconductor material including a plurality of openings extending from a top surface to a bottom surface of said solid substrate board forming an assembly template for one or more epitaxial layers;
- forming a first thin film epitaxial layer situated within said plurality of openings and defining a multidimensional structure integrated within said solid substrate;
- forming a first semiconductor layer situated on said solid substrate and/or said first thin film epitaxial layer and defining one or more active devices;
- forming a second thin film epitaxial layer situated on and defining a p-n junction with said first thin film epitaxial layer;
- wherein said assembly substrate is separate from a seed substrate used to grow said first thin film epitaxial layer.
2 more elements
A method of forming an epitaxial semiconductor structure with a liquid phase epitaxial (LPE) material comprising the steps:
- providing a solid substrate comprised substantially of non-semiconductor material including a plurality of openings forming a first assembly template for one or more epitaxial layers;
- providing a seed substrate;
- forming a first thin film epitaxial layer with the LPE material situated within said plurality of openings and defining a multidimensional structure integrated within said first assembly substrate and situated in contact with said seed substrate;
- forming a first semiconductor layer situated on said first assembly substrate and/or said first thin film epitaxial layer and defining one or more active devices;
- forming a second thin film epitaxial layer situated on and defining a p-n junction with said first thin film epitaxial layer using a second assembly template;
- controlling a temperature of said LPE material at or below a re-melting temperature of the bulk of said LPE material for said first thin film epitaxial layer so as to separate said first thin film epitaxial layer from said seed substrate.
3 more elements
A method of forming an epitaxial semiconductor structure comprising the steps:
- providing a solid substrate comprised substantially of non-semiconductor material including a plurality of openings forming an assembly template for one or more epitaxial layers;
- forming a first thin film epitaxial layer situated within said plurality of openings and defining a multidimensional structure integrated within said solid substrate;
- forming a first semiconductor layer situated on said solid substrate and/or said first thin film epitaxial layer and defining one or more active devices;
- forming a second thin film epitaxial layer situated on and defining a p-n junction with said first thin film epitaxial layer;
- forming one or more second separate assembly templates containing one or more separate thin film epitaxial layers on said second thin film epitaxial layer;
- wherein said one or more separate thin film epitaxial layers and said second thin film epitaxial layer include different dopant species.
3 more elements
A method of forming an epitaxial semiconductor structure comprising the steps:
- providing a solid substrate comprised substantially of non-semiconductor material including a plurality of openings forming an assembly template for one or more epitaxial layers;
- forming a first thin film epitaxial layer situated within said plurality of openings and defining a multidimensional structure integrated within said solid substrate and over a crystalline seed substrate;
- forming a first semiconductor layer situated on said solid substrate and/or said first thin film epitaxial layer and defining one or more active devices;
- forming a second thin film epitaxial layer situated on and defining a p-n junction with said first thin film epitaxial layer;
- forming a sacrificial layer attached between a bottom surface of said assembly template and a top surface of said crystalline seed substrate.
2 more elements
A method of forming an epitaxial semiconductor structure comprising the steps:
- providing a solid substrate comprised substantially of non-semiconductor material including a plurality of openings forming an assembly template for one or more epitaxial layers;
- forming a first thin film epitaxial layer situated within said plurality of openings and defining a multidimensional structure integrated within said solid substrate and over a crystalline seed substrate;
- forming a first semiconductor layer situated on said solid substrate and/or said first thin film epitaxial layer and defining one or more active devices;
- forming a second thin film epitaxial layer situated on and defining a p-n junction with said first thin film epitaxial layer;
- forming a spacer situated adjacent said assembly template and above said crystalline seed substrate.
2 more elements
Dependencies are inferred from the claim text.