Back to results
US 8,507,370 B2Granted
Method of transferring epitaxial film
AssigneeAthenaeum, LLC
InventorEric Ting-Shan Pan
Life of this patent
Estimating the term…
Abstract
A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
Claims29
A method of transferring an epitaxial thin film comprising:
- providing a first frame portion with a body adapted to hold an assembly substrate;
- wherein said assembly substrate includes a plurality of openings adapted to retain an epitaxial layer, and said plurality of openings extend from a top surface of said assembly substrate to a bottom surface thereof;
- providing a second base portion adapted to hold a seed substrate in fixed contact with said assembly substrate;
- wherein said seed substrate can be used for growing said epitaxial layer within said assembly substrate from a liquid phase epitaxial material, and such that said epitaxial layer contacts said seed substrate within said plurality of openings;
- controllably separating said first frame portion and said second base portion so as to cause a separation of said epitaxial layer from said seed substrate;
- wherein said epitaxial layer can be transferred as a distinct layer from said seed substrate.
3 more elements
A method of transferring an epitaxial thin film comprising:
- providing a first frame portion with a body adapted to hold an assembly substrate;
- wherein said assembly substrate includes a plurality of openings adapted to retain an epitaxial layer, and said plurality of openings extend from a top surface of said assembly substrate to a bottom surface thereof;
- providing a second base portion adapted to hold a seed substrate in fixed contact with said assembly substrate;
- wherein said seed substrate can be used for growing said epitaxial layer within said assembly substrate from a liquid phase epitaxial material which is temperature controlled such that said epitaxial layer contacts said seed substrate within said plurality of openings and grows from a bottom portion upwards;
- controllably separating said first frame portion and said second base portion, including with a heating process which is just below a re-melting temperature of the bulk of said epitaxial layer, so as to cause a separation of said epitaxial layer from said seed substrate;
- wherein said epitaxial layer can be transferred as a distinct layer from said seed substrate.
3 more elements
Dependencies are inferred from the claim text.