Method for producing silicon nanowire devices

A method for producing silicon nanowire devices including the following steps:

• S101:
• Growing silicon nanowire (SiNW) on a substrate;
• S102:
• Depositing an amorphous carbon layer to cover the SiNW, followed by depositing a dielectric anti-reflectivity coating on the amorphous carbon layer;
• S103:
• Removing part of the dielectric anti-reflectivity coating and the amorphous carbon layer above the SiNW through dry etching to expose the SINW device area;
• S104:
• Depositing an oxide film on the surface of the above structure formed by S103;
• S105:
• Forming a metal pad connected with the SiNW in the SiNW device area;
• S106:
• Depositing a passivation layer on the surface of the above structure formed by S105;
• S107:
• Applying photolithography and etching technology to form contact holes on the metal pad and to remove the passivation layer, the oxide film and the dielectric anti-reflectivity coating above the SiNW outside the SiNW device area, and stopping on the amorphous carbon layer;
• S108:
• Removing the amorphous carbon layer above the SiNW outside the SiNW device area through ashing process to expose the SiNW.