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US 8,507,367 B2Granted
Separation of semiconductor devices
AssigneeTinggi Technologies Pte Limited
InventorsXuejun Kang, Shu Yuan, Jenny Lam, Shiming Lin
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Abstract
A method of fabricating semiconductor devices is disclosed. The method comprises providing a substrate with a plurality of epitaxial layers mounted on the substrate and separating the substrate from the plurality of epitaxial layers while the plurality of epitaxial layers is intact. This preserves the electrical, optical, and mechanical properties of the plurality of epitaxial layers.
Claims21
A method of fabricating semiconductor devices, the method comprising:
- providing a substrate with a plurality of epitaxial layers mounted on the substrate;
- and
- encapsulating the plurality of epitaxial layers and a part of the substrate with a soft buffer material, leaving a lower surface of the substrate exposed;
- separating the substrate from the plurality of epitaxial layers while the plurality of epitaxial layers are intact while preserving electrical, mechanical and optical properties of the plurality of epitaxial layers;
- and
- removing the soft buffer material.
3 more elements
Dependencies are inferred from the claim text.