Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates

A method of fabricating a semiconductor device comprising:

• providing a substrate having a crystalline surface with a known lattice parameter (a) and having a cubic crystal system structure;
• growing a crystalline semiconductor layer on a {111} plane of the crystalline substrate surface by coincident site lattice matched epitaxy, without any buffer layer between the crystalline semiconductor layer and the crystalline surface of the substrate, wherein the crystalline semiconductor layer is prepared to have a lattice parameter (a′) that is related to the lattice parameter (a);
• and epitaxially growing one or more subsequent crystalline semiconductor layers on the first crystalline semiconductor layer.

An electronic device comprising:

• a substrate having a crystalline surface with a known lattice parameter (a) and a cubic crystal system structure;
• a crystalline semiconductor layer grown on the crystalline substrate surface by coincident site lattice matched epitaxy, without any buffer layer between the crystalline semiconductor layer and the crystalline surface of the substrate, wherein the crystalline semiconductor layer is prepared to have a lattice parameter (a′) that is related to the lattice parameter (a), the crystalline semiconductor layer having a wurtzite crystalline structure.