On-chip capacitors in combination with CMOS devices on extremely thin semiconductor on insulator (ETSOI) substrates

A method of forming a device comprising:

• providing a semiconductor on insulator (SOI) substrate including a semiconductor device region and a capacitor device region;
• forming a replacement structure in at least the semiconductor device region;
• forming an epitaxial semiconductor material having a first portion in the semiconductor device region and a second portion in the capacitor device region, wherein the first portion of the epitaxial semiconductor material provides raised source and drain regions on opposing sides of the replacement gate structure, and the second portion of the epitaxial semiconductor material provides a first electrode of a capacitor, wherein the first portion of the epitaxial semiconductor material and the second portion of the epitaxial semiconductor material have a same composition;
• removing the replacement gate structure from the semiconductor device region to form an opening to a channel portion of the SOI substrate;
• forming a dielectric layer having a first portion in the semiconductor device region and a second portion in the capacitor device region, wherein the first portion of the dielectric layer provides a gate dielectric in the opening to the channel portion of the SOI substrate, and the second portion of the dielectric layer provides a node dielectric layer of the capacitor, wherein the first portion of the dielectric layer and the second portion of the dielectric layer have a same composition;
• and
• forming a conductive layer having a first portion in the semiconductor device region and a second portion in the capacitor device region, wherein the first portion of the conductive layer provides a gate conductor that is present on the gate dielectric and the second portion of the conductive layer is present on the node dielectric layer and provides a second electrode of the capacitor, wherein the first portion of the conductive layer and the second portion of the conductive layer have a same composition.