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US 8,507,351 B2Granted
Dopant profile tuning for MOS devices by adapting a spacer width prior to implantation
AssigneeGlobalfoundries Inc.
InventorsAnthony Mowry, Markus Lenski, Guido Koerner, Ralf Otterbach
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Abstract
By selectively modifying the spacer width, for instance, by reducing the spacer width on the basis of implantation masks, an individual adaptation of dopant profiles may be achieved without unduly contributing to the overall process complexity. For example, in sophisticated integrated circuits, the performance of transistors of the same or different conductivity type may be individually adjusted by providing different sidewall spacer widths on the basis of an appropriate masking regime.
Claims17
A method, comprising:
- forming a first implantation mask above a first device region and a second device region of a semiconductor device, said first implantation mask covering said second device region and exposing said first device region;
- performing a first implantation process on the basis of a first parameter setting to implant a first dopant species to define a first dopant profile laterally adjacent to a first device feature formed above said first device region;
- forming a second implantation mask above said first and second device regions, said second implantation mask covering said first device region and exposing said second device region;
- reducing a lateral extension of a second device feature formed above said second device region by using said second implantation mask as an etch mask, wherein said reduction in the lateral extension of the second device feature is determined based on a first diffusivity of the first dopant species and a second diffusivity of a second dopant species;
- and
- performing a second implantation process on the basis of a second parameter setting to implant the second dopant species to define a second dopant profile laterally adjacent to said second device feature.
3 more elements
A method, comprising:
- forming a first implantation mask to expose a first device region and cover a second device region of a semiconductor device;
- implanting a first dopant species in said first device region to define a first dopant profile laterally adjacent to a first device feature formed above said first device region;
- forming a second implantation mask to cover said first device region and expose said second device region;
- reducing a lateral extension of a second device feature formed above said second device region by using said second implantation mask as an etch mask, wherein said reduction in the lateral extension of the second device feature is determined based on a difference in dopant diffusivity in the first and second device regions;
- and
- implanting the second dopant species to define a second dopant profile laterally adjacent to said second device feature.
3 more elements
Dependencies are inferred from the claim text.