Back to results
US 8,507,349 B2Granted
Semiconductor device employing fin-type gate and method for manufacturing the same
AssigneeHynix Semiconductor Inc.
InventorSeung Hyun Lee
Life of this patent
Estimating the term…
Abstract
A semiconductor device comprises an active region having an upper portion and a sidewall portion which are protruded from the top surface of a device isolation region, and a silicide film disposed in the upper portion and the sidewall portion of the active region, thereby effectively reducing resistance in a source/drain region of the semiconductor device. As a result, the entire resistance of the semiconductor device comprising a fin-type gate can be reduced to improve characteristics of the semiconductor device.
Claims10
A method for manufacturing a semiconductor device, the method comprising:
- forming a device isolation region in a semiconductor substrate;
- forming a gate line buried in the device isolation region;
- etching the device isolation region to form a trench in the device isolation region using the gate line as an etching mask so that an upper portion and a sidewall portion of an active region are exposed;
- and
- forming a silicide film over the upper portion and the sidewall portion of the active region.
2 more elements
Dependencies are inferred from the claim text.