Field effect transistors for a flash memory comprising a self-aligned charge storage region
AssigneeGlobalfoundries Inc.
InventorsThilo Scheiper, Sven Beyer, Uwe Griebenow, Jan Hoentschel
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Abstract
Storage transistors for flash memory areas in semiconductor devices may be provided on the basis of a self-aligned charge storage region. To this end, a floating spacer element may be provided in some illustrative embodiments, while, in other cases, the charge storage region may be efficiently embedded in the electrode material in a self-aligned manner during a replacement gate approach. Consequently, enhanced bit density may be achieved, since additional sophisticated lithography processes for patterning the charge storage region may no longer be required.
Claims6
A method of storing information in a non-volatile storage transistor, the method comprising:
- providing a charge storage region adjacent to and electrically insulated from a drain region and a gate electrode of said storage transistor, said charge storage region being positioned to influence charge flow in a channel region of said storage transistor, wherein providing said charge storage region comprises providing said charge storage region within said gate electrode and separated therefrom by a high-k dielectric material;
- and
- applying a programming voltage between said gate electrode and said drain region of said storage transistor so as to initiate charge carrier transfer from said gate electrode to said charge storage region.
Dependencies are inferred from the claim text.