Method of fabricating a nonvolatile memory

A method for manufacturing a semiconductor device,

• the semiconductor device, comprising:
• a semiconductor substrate;
• a first gate electrode and a second gate electrode formed over the top of the semiconductor substrate, and adjacent to each other;
• a first gate insulation film formed between the first gate electrode and the semiconductor substrate;
• and
• a second gate insulation film formed between the second gate electrode and the semiconductor substrate, and having a charge storage part in the inside thereof,
• the method, comprising the steps of:
• (a) preparing the semiconductor substrate;
• (b) forming an insulation film for the first gate insulation film over the main surface of the semiconductor substrate;
• (c) forming a first conductor film for the first gate electrode over the insulation film;
• (d) forming a first insulation film over the first conductor film;
• (e) forming a second insulation film over the first insulation film;
• (f) patterning the second insulation film, the first insulation film, and the first conductor film, and forming a lamination pattern having the first conductor film forming the first gate electrode, the first insulation film over the first conductor film, and the second insulation film over the first insulation film;
• (g) side etching the first insulation film at a sidewall of the lamination pattern, and retreating the first insulation film from the first conductor film and the second insulation film;
• (h) after the step (g), forming a third insulation film for the second gate insulation film, and having a charge storage part in the inside thereof over the main surface of the semiconductor substrate and the sidewall of the lamination pattern;
• and
• (i) forming the second gate electrode adjacent to the lamination pattern via the third insulation film over the third insulation film.