Method for doping semiconductor structures and the semiconductor device thereof

A method for introducing species into a strained semiconductor layer, wherein said method comprising:

• a) providing in a reaction chamber a substrate comprising a first region comprising an exposed strained semiconductor layer and a second region comprising an exposed strained semiconductor layer,
• b) forming a conformal first species containing-layer by vapor phase deposition at least on the exposed strained semiconductor layer of the first region, and thereafter
• c) performing a first thermal treatment, thereby diffusing at least part of the first species from the first species-containing layer into the strained semiconductor layer of the first region and activating at least part of the diffused first species in the strained semiconductor layer of the first region,
• d) after diffusing the first species into the exposed strained semiconductor layer of the first region, forming a diffusion mask thereby covering the first region of the substrate,
• e) forming in a reaction chamber a conformal second species containing-layer by vapor phase deposition at least on the exposed strained semiconductor layer of the second region, and thereafter
• f) performing a second thermal treatment, thereby diffusing at least part of the second species from the second species-containing layer into the strained semiconductor layer of the second region, and activating at least part of the diffused first species and/or the diffused second species.