Thin film transistor
AssigneeSony Corporation
InventorsChunmei Wang, Wei Beng Ng, Takehisa Ishida
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Abstract
A method is proposed for producing a thin-film transistor (TFT), the method comprising forming a substrate, applying a ZnO-based precursor solution onto the substrate to form a ZnO-based channel layer, annealing the channel layer, forming a source electrode and a drain electrode on the channel layer, forming a dielectric layer on the channel layer and forming a gate electrode on the dielectric layer.
Claims15
A method for producing a thin-film transistor (TFT) comprising, in this order:
- forming a substrate;
- applying a metal oxide-based precursor solution onto the substrate to form a metal oxide-based channel layer;
- annealing the channel layer;
- forming a source electrode and a drain electrode on the channel layer;
- forming a dielectric layer on the channel layer;
- and
- forming a gate electrode on the dielectric layer,
- wherein,
- forming the dielectric layer further comprises baking the dielectric layer using a hot plate, patterning the dielectric layer using ultra-violet light and a shadow mask, and heat curing the dielectric layer in a vacuum oven.
The method according to any of the preceding claims wherein the metal oxide-based channel layer is a ZnO-based channel layer.
A method for producing a thin-film transistor (TFT) comprising, in this order:
- forming a substrate;
- applying a metal oxide-based precursor solution onto the substrate to form a metal oxide-based channel layer;
- annealing the channel layer;
- forming a source electrode and a drain electrode on the channel layer;
- forming a dielectric layer on the channel layer;
- and
- forming a gate electrode on the dielectric layer,
- wherein,
- forming the dielectric layer comprises a process selected from the group consisting of (a) spin coating with an organic precursor solution, (b) drop casting with the organic precursor solution, and (c) inkjet printing with the organic precursor solution, and
- forming the dielectric layer further comprises baking the dielectric layer using a hot plate patterning the dielectric layer using ultra-violet light and a shadow mask and heat curing the dielectric layer in a vacuum oven.
A method for producing a thin-film transistor (TFT) comprising, in this order:
- forming a substrate;
- applying a metal oxide-based precursor solution onto the substrate to form a metal oxide-based channel layer;
- annealing the channel layer;
- forming a source electrode and a drain electrode on the channel layer;
- forming a dielectric layer on the channel layer;
- and
- forming a gate electrode on the dielectric layer,
- wherein,
- forming the dielectric layer comprises a process selected from the group consisting of (a) spin coating with an organic precursor solution, (b) drop casting with the organic precursor solution, and (c) inkjet printing with the organic precursor solution,
- the organic precursor solution is prepared using (a) a poly-vinyl-phenol (PVP) powder, (b) a poly-melamine-co-formaldehyde cross-linking agent, and (c) a solvent,
- the solvent is selected from the group consisting of (a) propylene glycol monomethyl ether acetate (PGMEA), (b) n-butanol, (c) 1-propanol, (d) n-methylpyrrolidone (NMP), and (e) acetone,
- forming the dielectric layer further comprises (a) baking the dielectric layer using a hot plate, (b) patterning the dielectric layer using ultra-violet light and a shadow mask, and (c) heat curing the dielectric layer in a vacuum oven, and
- the heat curing the dielectric layer is done at a temperature lower than or equal to 200° C.
Dependencies are inferred from the claim text.