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US 8,507,329 B2Granted
Compound semiconductor device and method of manufacturing the same
AssigneeFujitsu Limited
InventorsToshihide Kikkawa, Kenji Imanishi
Life of this patent
Estimating the term…
Abstract
A compound semiconductor device is provided with a substrate, an AlN layer formed over the substrate, an AlGaN layer formed over the AlN layer and larger in electron affinity than the AlN layer, another AlGaN layer formed over the AlGaN layer and smaller in electron affinity than the AlGaN layer. Furthermore, there are provided an i-GaN layer formed over the latter AlGaN layer, and an i-AlGaN layer and an n-AlGaN layer formed over the i-GaN layer.
Claims7
A method of manufacturing a compound semiconductor device, comprising:
- forming a first buffer layer of a first nitride semiconductor over a substrate;
- forming over the first buffer layer a second buffer layer of a second nitride semiconductor larger in electron affinity than the first buffer layer;
- forming over the second buffer layer a third buffer layer of a third nitride semiconductor smaller in electron affinity than the second buffer layer;
- forming a channel layer over the third buffer layer;
- and
- forming an electron supply layer over the channel layer.
3 more elements
A method of manufacturing a compound semiconductor device, comprising:
- forming a first buffer layer of a first nitride semiconductor containing aluminum over a substrate;
- forming over the first buffer layer a second buffer layer of a second nitride semiconductor containing a lower concentration of aluminum than that in the first buffer layer;
- forming over the second buffer layer a third buffer layer of a third nitride semiconductor containing a higher concentration of aluminum than that in the second buffer layer;
- forming a channel layer over the third buffer layer;
- and
- forming an electron supply layer over the channel layer.
3 more elements
Dependencies are inferred from the claim text.