Back to results
US 8,507,315 B2Granted
Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
AssigneeSanDisk 3D LLC
InventorsApril D. Schricker, S. Brad Herner, Mark H. Clark
Life of this patent
Estimating the term…
Abstract
A method of forming a memory cell is provided that includes forming a steering element above a substrate, and forming a reversible resistance-switching element coupled to the steering element. The reversible resistance-switching element includes one or more of TiOx, Ta2O5, Nb2O5, Al2O3, HfO2, and V2O5, and the reversible resistance switching element is formed without being etched. Numerous other aspects are provided.
Claims9
A method of forming a memory cell, the method comprising:
- forming a steering element above a substrate;
- and
- forming a reversible resistance-switching element coupled to the steering element, wherein:
- the reversible resistance-switching element comprises one or more of TiOx, Ta2O5, Nb2O5, Al2O3, HfO2, and V2O5, and
- the reversible resistance switching element is formed without being etched.
2 more elements
Dependencies are inferred from the claim text.