Method of manufacturing photoelectric conversion device

A method of manufacturing a photoelectric conversion device, comprising the steps of:

• providing a single crystal semiconductor substrate wherein the single crystal semiconductor substrate includes a fragile layer therein and a first impurity semiconductor layer at one surface side thereof and the single crystal semiconductor substrate is provided with a first electrode on the one surface side thereof;
• bonding the first electrode and a supporting substrate to each other;
• separating the single crystal semiconductor substrate using the fragile layer or vicinity of the fragile layer as a separation plane so that a first single crystal semiconductor layer is formed over the supporting substrate;
• irradiating the first single crystal semiconductor layer with a laser beam to form an unevenness on a surface of the first single crystal semiconductor layer;
• forming an amorphous semiconductor layer on the first single crystal semiconductor layer after irradiating the first single crystal semiconductor layer with the laser beam, wherein the first single crystal semiconductor layer is located between the amorphous semiconductor layer and the first electrode;
• performing heat treatment for solid phase growth of the amorphous semiconductor layer so that a second single crystal semiconductor layer is formed;
• and
• forming a second electrode over the second single crystal semiconductor layer.

A method of manufacturing a photoelectric conversion device, comprising the steps of:

• providing a single crystal semiconductor substrate wherein the single crystal semiconductor substrate includes a fragile layer therein and a first impurity semiconductor layer at one surface side thereof and the single crystal semiconductor substrate is provided with a first electrode on the one surface side thereof;
• bonding the first electrode and a supporting substrate to each other;
• separating the single crystal semiconductor substrate using the fragile layer or vicinity of the fragile layer as a separation plane so that a first single crystal semiconductor layer is formed over the supporting substrate;
• irradiating the first single crystal semiconductor layer with a laser beam to form an unevenness on a surface of the first single crystal semiconductor layer;
• forming a first amorphous semiconductor layer on the first single crystal semiconductor layer after irradiating the first single crystal semiconductor layer with the laser beam, wherein the first single crystal semiconductor layer is located between the first amorphous semiconductor layer and the first electrode;
• forming a second amorphous semiconductor layer on the first amorphous semiconductor layer;
• performing heat treatment for solid phase growth of the first amorphous semiconductor layer and the second amorphous semiconductor layer so that a second single crystal semiconductor layer and a second impurity semiconductor layer are formed;
• and
• forming a second electrode over the second single crystal semiconductor layer.

A method of manufacturing a photoelectric conversion device, comprising the steps of:

• forming an amorphous semiconductor layer on a first single crystal semiconductor layer over a first electrode;
• performing heat treatment for solid phase growth of the amorphous semiconductor layer so that a second single crystal semiconductor layer is formed;
• and
• forming an impurity semiconductor layer over the second single semiconductor layer so that an entire top surface of the second single crystal semiconductor layer is in contact with at least a part of a surface of the impurity semiconductor layer.